CSD19538Q2T
Texas InstrumentsACTIVE
100V, N ch NexFET MOSFET™, single SON2x2, 59mOhm
Package / Visual Reference
CSD19538Q2TIC Package
Quick Facts
- Manufacturer
- Texas Instruments
- Package
- —
- Lifecycle
- ACTIVE
- Datasheet
- 📄 Available
Specifications
| Date Of Intro | 2016-07-09 |
| Features | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 8mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 14.4A |
| Drain-source On Resistance-Max | 0.072Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 16.4pF |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature Max | 150°C |
| Operating Temperature Min | -55°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20.2W |
| Pulsed Drain Current-Max (IDM) | 34.4A |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
About Texas Instruments
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